Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM measurements.
作者： Yoshikazu Takeda , Masao Tabuchi , Arao Nakamura
DOI: 10.1088/0953-8984/22/47/474011
关键词:
摘要: Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layer thicknesses, were measured x-ray CTR scattering and cross-sectional STM techniques. Both techniques showed quite similar results, which indicates that measurements analyses give us correct both for group-III group-V atoms buried heterostructures non-destructively. Limits analysis are discussed, especially on spatial resolution grading below bottom interface.
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