Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test

摘要: Abstract SIMS with low energy (down to 250 eV) primary ions has been widely used for ultra-shallow dopant profiling ULSI device development. In spite of its high performance in depth resolution, there still remain ambiguities be overcome technique accurate and concentration calibrations the shallow regions. order get boron profiles, BN-delta-doped multilayer reference materials were developed evaluated a round-robin study using SIMS. Those delta-doped layers measure sputter rate change initial stage oxygen–ion bombardment.