Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy

作者: Shuai Liu , Guang-Hua Yu , Mei-Yin Yang , Hai-Lang Ju , Bao-He Li

DOI: 10.1007/S12598-014-0404-2

关键词:

摘要: Pseudo spin valves (SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers performed to select reference and free layers. The selection criteria are square hysteresis loops, weaker current shunting effect, proper coercivity. optimal layer Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm) Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively. resulting pseudo SV exhibits two well-separated loops when field is applied film plane. minor loop corresponding shifts toward negative direction axis, indicating ferromagnetic interlayer exchange coupling between also enhances coercivity (H C) both giant magnetoresistance (GMR) 2.7 % achieved with in plane measurement. GMR first increases Pt seed thickened, reaches a maximum 3.0 % at 4 nm then decreases further increase thickness. But thicker Cu spacer always lowers SV.

参考文章(27)
R. Sbiaa, H. Meng, S. N. Piramanayagam, Frontispiece: Materials with perpendicular magnetic anisotropy for magnetic random access memory (Phys. Status Solidi RRL 12/2011) Physica Status Solidi-rapid Research Letters. ,vol. 5, ,(2011) , 10.1002/PSSR.201150345
Z. Y. Liu, F. Zhang, N. Li, B. Xu, D. L. Yu, J. L. He, Y. J. Tian, Thermal behavior of the interlayer coupling in a spin-valve Co/Pt multilayer with perpendicular anisotropy Journal of Applied Physics. ,vol. 104, pp. 113903- ,(2008) , 10.1063/1.3033519
S. Mangin, D. Ravelosona, J. A. Katine, M. J. Carey, B. D. Terris, Eric E. Fullerton, Current-induced magnetization reversal in nanopillars with perpendicular anisotropy Nature Materials. ,vol. 5, pp. 210- 215 ,(2006) , 10.1038/NMAT1595
Zoë Kugler, Jan-Philipp Grote, Volker Drewello, Oliver Schebaum, Günter Reiss, Andy Thomas, Co/Pt multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy Journal of Applied Physics. ,vol. 111, ,(2012) , 10.1063/1.3670972
E.H. Sondheimer, The mean free path of electrons in metals Advances in Physics. ,vol. 50, pp. 499- 537 ,(1952) , 10.1080/00018735200101151
S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O’Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Yu Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, W. J. Gallagher, Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) Journal of Applied Physics. ,vol. 85, pp. 5828- 5833 ,(1999) , 10.1063/1.369932
Naoki Nishimura, Tadahiko Hirai, Akio Koganei, Takashi Ikeda, Kazuhisa Okano, Yoshinobu Sekiguchi, Yoshiyuki Osada, Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory Journal of Applied Physics. ,vol. 91, pp. 5246- 5249 ,(2002) , 10.1063/1.1459605
B. Dieny, GIANT MAGNETORESISTANCE IN SPIN-VALVE MULTILAYERS Journal of Magnetism and Magnetic Materials. ,vol. 136, pp. 335- 359 ,(1994) , 10.1016/0304-8853(94)00356-4
Jeong-Heon Park, Chando Park, Taehee Jeong, Matthew T. Moneck, Noel T. Nufer, Jian-Gang Zhu, Co /Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy Journal of Applied Physics. ,vol. 103, ,(2008) , 10.1063/1.2838754
J. M. Daughton, Magnetic Tunneling Applied to Memory (Invited) Journal of Applied Physics. ,vol. 81, pp. 3758- 3763 ,(1997) , 10.1063/1.365499