180 GHz HBT MMIC Amplifier with 80 GHz Bandwidth and Low Noise Figure in 250 nm InP
作者： Frank Ellinger , Corrado Carta , Paul Starke
DOI:
关键词:
摘要: This work presents an integrated wideband amplifier, with ac-coupled two-stage cascode topology. It is intended for mm-wave applications at 180 GHz (G-band) and offers a gain of 17.7 dB bandwidth 80 GHz. The design optimized low noise figure 7.5 reaches medium output power levels, 1-dB compression point occuring about 0 dBm. total consumption, including bias blocks, 48 mW. stability the cascodes are improved matching networks employing inductive feedback from collector to base. An method, based on zero-ohm transmission lines, used realizing ac-blocks equivalent series resistance. final chip occupies area 0.42 mm2 implemented as monolithic microwave circuit (MMIC) in 250 nm InP heterojucntion bipolar transistor (HBT) process, which maximum oscillation frequency f max 600
参考文章(8)
Giuseppe Moschetti, Arnulf Leuther, Herman Massler, Beatriz Aja, Markus Rosch, Michael Schlechtweg, Oliver Ambacher, Ville Kangas, Marie Genevieve-Perichaud, A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure IEEE Microwave and Wireless Components Letters. ,vol. 25, pp. 618- 620 ,(2015) , 10.1109/LMWC.2015.2451355
G. Tretter, D. Fritsche, J.D. Leufker, C. Carta, F. Ellinger, Zero-Ohm transmission lines for millimetre-wave circuits in 28 nm digital CMOS Electronics Letters. ,vol. 51, pp. 845- 847 ,(2015) , 10.1049/EL.2015.0903
David Fritsche, Corrado Carta, Frank Ellinger, A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 $\mu$ m SiGe BiCMOS IEEE Microwave and Wireless Components Letters. ,vol. 24, pp. 790- 792 ,(2014) , 10.1109/LMWC.2014.2350691
M. Varonen, A. Safaripour, D. Parveg, P. Kangaslahti, T. Gaier, A. Hajimiri, 200-GHz CMOS amplifier with 9-dB noise figure for atmospheric remote sensing Electronics Letters. ,vol. 52, pp. 369- 371 ,(2016) , 10.1049/EL.2015.3337
Christopher T. Coen, Ahmet Cagri Ulusoy, Peter Song, Adrian Ildefonso, Mehmet Kaynak, Bernd Tillack, John D. Cressler, Design and On-Wafer Characterization of $G$ -Band SiGe HBT Low-Noise Amplifiers IEEE Transactions on Microwave Theory and Techniques. ,vol. 64, pp. 3631- 3642 ,(2016) , 10.1109/TMTT.2016.2608773
Miguel Urteaga, Zach Griffith, Munkyo Seo, Jonathan Hacker, Mark J. W. Rodwell, InP HBT Technologies for THz Integrated Circuits Proceedings of the IEEE. ,vol. 105, pp. 1051- 1067 ,(2017) , 10.1109/JPROC.2017.2692178
A. Tessmann, A. Leuther, S. Wagner, H. Massler, M. Kuri, H.-P. Stulz, M. Zink, M. Riessle, T. Merkle, A 300 GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications international microwave symposium. pp. 760- 763 ,(2017) , 10.1109/MWSYM.2017.8058687
Paul Starke, David Fritsche, Corrado Carta, Frank Ellinger, A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz european microwave integrated circuits conference. pp. 5- 8 ,(2017) , 10.23919/EUMIC.2017.8230646