A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz
作者： Paul Starke , David Fritsche , Corrado Carta , Frank Ellinger
DOI: 10.23919/EUMIC.2017.8230646
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摘要: This work presents a low noise amplifier with variable gain, large bandwidth and tunable output matching network fabricated in 130 nm SiGe BiCMOS technology. The circuit is designed as an input stage for mm-wave wireless applications, where gain control improves the linearity of full system extends its input-power range. performance optimized inductive interstage technique, while simultaneously increasing average per stage. total adjustable from 0 dB to 24.7 dB, minimum simulated figure 9.2 corresponding 20 GHz attained at dB. reflection coefficient tuned through varactor-based over 10 bandwidth. maximum referred 1 compression point −25.5 dBm. achieved dc power consumption up 37.2 mW. area complete integrated 0.48 mm2.
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