A polysilicon resistor and a method of producing it
作者： Ulf Smith , Matts Rydberg
DOI:
关键词:
摘要: A resistor has a body (11) of polycrystalline silicon and electric contact regions (23, 15) arranged on and/or in the (11), so that part (13) is formed between regions, which gives its resistance. The material doped with for example boron to define To give good long term stability protected by one or more oxide based blocking layers (28, 31) produced from transition metals. These can prevent movable kinds atoms such as hydrogen reaching unsaturated bonds polysilicon. Such exist passivation (27) located outermost an integrated electronic circuit included. be having 30 % titanium 70 tungsten, are oxidized using peroxide.
google.com.mx参考文章(13)
Monte Manning, Ruojia Lee, Self-aligned vertical intrinsic resistance ,(1992)
Ronald P. Kovacs, Euisik Yoon, Michael E. Thomas, Method of providing a dielectric structure for semiconductor devices ,(1994)
Matts Rydberg, Ulf Smith, A stabilized polysilicon resistor and a method of manufacturing it ,(1997)
Subhash Nariani, Vivek Jain, Dipankar Pramanik, Method for suppressing charge loss in EEPROMs/EPROMS and instabilities in SRAM load resistors ,(1992)
Masaaki Ikegami, Tetsuo Higuchi, Method of manufacturing a semiconductor device with hydrogen ion intercepting layer ,(1994)
James Austin Walls, Semiconductor structure having a titanium barrier layer ,(1997)
Robert H. Eklund, Robert H. Havemann, Leo Stroth, Resistor structure and process ,(1991)
Han-Liang Tseng, Shun-Liang Hsu, Mou-Shiung Lin, Method for shielding polysilicon resistors from hydrogen intrusion ,(1995)
Matts Rydberg, Håkan Hansson, Ulf Smith, A polysilicon resistor and a method of manufacturing it ,(1996)
Akira Fujisawa, Kazuhiro Takenaka, Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film ,(1994)