Method of manufacturing a semiconductor device with hydrogen ion intercepting layer
作者： Masaaki Ikegami , Tetsuo Higuchi
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摘要: To manufacture a semiconductor device first insulating oxide film and second thicker film, which continues to the are formed on substrate. The films covered by polysilicon selectively patterned nitride layer or over In case, silicon is in lowermost portion of implanting nitrogen ions then applying heat treatment. for forming resistance films, respectively. A electrode connected film. An protection substrate covers electrodes.
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