作者: Hyun Gon Oh , Kyung Soo Kim , Jimi Eom , Sang Jik Kwon , Eou Sik Cho
DOI: 10.1080/15421406.2013.853551
关键词:
摘要: Nb2O5films were deposited with pulsed DC magnetron sputter which is versatile and provides the ability to deposit thin film of oxide compounds high deposition rate. Current measurement data from metal-insulator-semiconductor (MIS) structure followed Schottky emission mechanism andreverse current characteristics analyzed oxygen flow rate variation. Low frequency noise measurements have been carried out MIS samples at forward conduction region. The experimental successfully explained by random walk model. effect O2flow process on low has also investigated analyzed.