作者: Damir Starešinić , Matjaž Spreitzer , Jure Demsar , Maja Đekić , Kerim Hrvat
DOI: 10.1016/J.TSF.2021.138745
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摘要: Abstract Pulsed laser deposition technique was employed to grow thin films of K 0.3 M o O 3 on A l 2 (1-102) and S r T i (510) substrates. Structural imaging characterization revealed good quality with well oriented grains few microns in length. Both non-selective (transport) order-selective (femtosecond pump-probe spectroscopy) probes charge density wave properties that are very close those the single crystals. The exhibit metal-semiconductor phase transition resistivity, data show at same temperature as crystal threshold for photo-induced is approximately crystal. We compare differing by an order magnitude