Room temperature luminescence of Er doped nc-Si/SiO2 superlattices
作者： M. Zacharias , S. Richter , P. Fischer , M. Schmidt , E. Wendler
DOI: 10.1016/S0022-3093(99)00753-X
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摘要: Abstract Amorphous Si/SiO2 superlattices with a 80 nm top oxide are implanted various erbium doses (1.2×1015– 5.2×10 16 cm −2 ) . The effect of Si nanocrystals in the vicinity Er ions is investigated. We found that luminescence intensity increased compared to an a-SiO2 film same dose. layers completely crystallized average crystal size 5.7 after annealing at 800°C. Room temperature 1.54 μm, and scales time. Increasing implantation dose decreases room intensity. Over whole range 7–300 K quenches below one order magnitude. Luminescence 2, 2.55 3.0 eV assigned interface defects nanocrystal surface damage SiO2.
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