Dielectric properties of Nb-doped CaCu3Ti4O12 electroceramics measured at high frequencies
作者： Muhammad Azwadi Sulaiman , Sabar D. Hutagalung , Mohd Fadzil Ain , Zainal A. Ahmad
DOI: 10.1016/J.JALLCOM.2009.12.137
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摘要: Abstract In this work, Nb dopant was introduced into CaCu3Ti4O12 (CCTO) electroceramic in order to improve the dielectric properties. The CCTO prepared using solid state reaction method. An X-ray diffractometer (XRD) analysis proved formation of a single phase after sintering at 1040 °C for 10 h. Abnormal grain growth observed undoped and 1 mol% Nb-doped CCTO. Normal produced levels higher than 3 mol%. Dielectric properties were measured frequency range 1 MHz 1 GHz. It found that doped with gave highest constant 18,000 1 MHz. Meanwhile, lowest loss (0.31) given by 10 mol% Nb. between 10 MHz 1 GHz almost stable values around 500.
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