Semiconductor laser source

作者: Thierry Fillardet , Eugene Leliard , Jean Pascal Duchemin , Eric Brousse

DOI:

关键词:

摘要: A semiconductor laser source, including a stack of diodes each at least one active region. The region includes series layers located between an ohmic contact layer and substrate which also assumes the function layer. Pressure keeps in with another by way their layers. Each diode has dimensions, especially thickness, so that transient heating is as small possible average stackable does not exceed predetermined value.

参考文章(7)
Hidenori Nishihara, Mitsuo Ishii, Submount for semiconductor laser device ,(1990)
W Ahearn, Gallium arsenide array ,(1972)
W. KLodzimierz Nakwaski, The thermal properties of a single-heterostructure laser diode supplied with short current pulses Optical and Quantum Electronics. ,vol. 11, pp. 319- 327 ,(1979) , 10.1007/BF00619365
J.G. Endriz, M. Vakili, G.S. Browder, M. DeVito, J.M. Haden, G.L. Harnagel, W.E. Plano, M. Sakamoto, D.F. Welch, S. Willing, D.P. Worland, H.C. Yao, High power diode laser arrays IEEE Journal of Quantum Electronics. ,vol. 28, pp. 952- 965 ,(1992) , 10.1109/3.135214
Dobson Christopher David, A mounting assembly for a semiconductor device ,(1967)
Isoda Youichi, Nomura Hidenori, Morihisa Yuuzou, SEMICONDUCTOR LIGHT-EMITTING ELEMENT ,(1983)