Quantum well saturable absorber mirror with electrical control of modulation depth
作者： Xiaomin Liu , Edik U. Rafailov , Daniil Livshits , Dmitry Turchinovich
DOI: 10.1063/1.3474799
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摘要: We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into p-i-n structure. By applying the reverse bias voltage in range 0–2 V to structure, we were able change SESAM modulation depth 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, pump fluence 1.6–26.7 μJ/cm2. This electrical control is achieved controlling small-signal loss via quantum-confined Stark effect QWs.
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