Optical tuning of light emitting semiconductor junctions
作者： Petar Atanackovic
DOI:
关键词:
摘要: Light emitting semiconductor junctions are disclosed. An exemplary light junction has a first electrical contact coupled to side of the junction. The also second region set straining material that exerts strain on and alters both: (i) an optical polarization, (ii) emission wavelength is not current path between said contact. covers third fourth along cross section device comprises three-five alloy.
google.com.sa 参考文章(80)
Joseph Laski, David W. Johnston, Kailash C. Mishra, Richard Speer, Strain relief superlattices and optoelectronic devices including the same ,(2014)
Jianping Zhang, Light-emitting device with heavily doped active-region and method for manufacturing the same ,(2014)
Asif Khan, Non-polar ultraviolet light emitting device and method for fabricating same ,(2008)
Michael Shur, Alexander Dobrinsky, Rakesh Jain, Alexander Lunev, Remigijus Gaska, Maxim S. Shatalov, Jinwei Yang, Semiconductor structure with inhomogeneous regions ,(2016)
Chunhui Yan, Strain balanced light emitting devices ,(2010)
Markus Weyers, Sven Einfeldt, Michael Kneissl, Hernan Rodriguez, P-contact and light-emitting diode for the ultraviolet spectral range ,(2010)
Mark C. Mendrick, Shawn R. Gibb, James R. Grandusky, Muhammad Jamil, Leo J. Schowalter, Pseudomorphic electronic and optoelectronic devices having planar contacts ,(2014)
Michael Shur, Rakesh Jain, Remigijus Gaska, Wenhong Sun, Maxim S. Shatalov, Jinwei Yang, Stress Relieving Semiconductor Layer ,(2014)
Adam M. Scotch, Matthew Stough, Kalish Mishra, Madis Raukas, David Hamby, Darshan Kundaliya, Wavelength converter for an led, method of making, and led containing same ,(2012)