Preparation of poly-Si films by Cat-CVD for thin film transistor
作者： Hideki Sunayama , Kazutaka Yamada , Minoru Karasawa , Keiji Ishibashi
DOI: 10.1016/S0040-6090(03)00120-2
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摘要: Abstract Polycrystalline silicon (poly-Si) films have been deposited on low-temperature substrates using a hot-wall type catalytic chemical vapor deposition apparatus. Average grain size of the poly-Si was 10–20 nm. Hall mobility 2–5 cm 2 V −1 s obtained even for sample left at ambient conditions month. The influence sidewall temperature film properties has investigated. prepared under hot/cold-wall conditions. Comparing crystalline fractions both measured by Raman spectroscopy, difference small. 89 and 85% were hot- cold-wall conditions, respectively. As results attenuated total reflection Fourier-transform infrared distinct between two found, H O atoms more incorporated in than
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sci-hub.se 参考文章(4)
Hideki Matsumura, Koji Kamesaki, Atsushi Masuda, Akira Izumi, Catalytic Chemical Sputtering: A Novel Method for Obtaining Large-Grain Polycrystalline Silicon Japanese Journal of Applied Physics. ,vol. 40, pp. 289- ,(2001) , 10.1143/JJAP.40.L289
Yoshitaka Nozaki, Koichi Kongo, Toshihiko Miyazaki, Makiko Kitazoe, Katsuhiko Horii, Hironobu Umemoto, Atsushi Masuda, Hideki Matsumura, Identification of Si and SiH in catalytic chemical vapor deposition of SiH4 by laser induced fluorescence spectroscopy Journal of Applied Physics. ,vol. 88, pp. 5437- 5443 ,(2000) , 10.1063/1.1314330
Tetsuya Kojima, Akihiro Ohishi, Hirotaka Toyoda, Masashi Goto, Mikihiko Nishitani, Hideo Sugai, Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductively-Coupled Plasma Japanese Journal of Applied Physics. ,vol. 40, pp. 322- 325 ,(2001) , 10.1143/JJAP.40.322
Akihisa Matsuda, Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 16, pp. 365- 368 ,(1998) , 10.1116/1.581105