作者: Tae-Hwan Jung , Soon-Il Kwon , Jae-Hwan Park , Dong-Gun Lim , Young-Jin Choi
DOI: 10.1007/S00339-008-4517-Z
关键词:
摘要: By using a thermal chemical vapor deposition and Au-catalyzed in situ alignment growth process, SnO2 nanowires could be bridged across trenched electrodes. In this complicated individual process avoided number of devices can fabricated one step wafer scale. The gas-sensing characteristics the developed sensor were significantly better when compared to those other types NO2 sensors reported literature. When concentration was 5 ppm, sensitivity higher than 150. Especially, reaction time 8–14 s noticeably fast, which is attributed microtrench structure beneath nanowires.