摘要: Implications in the use of electronic gating scheme depth profiling studies layer structures by means raster scanning secondary ion mass spectrometry are investigated. The profile sputtering crater and intensity variation after break-through calculated with scan width gate as parameters. Thick (5.6 μm) magnetic garnet layers grown an a non-magnetic substrate were used for measurements. A relative resolution 1% could be obtained. Comparison experimental results data shows excellent agreement.
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