Potentials and development of amorphous silicon carbide heterojunction solar cells
作者： D. Pysch , J. Ziegler , J.-P. Becker , D. Suwito , S. Janz
DOI: 10.1109/PVSC.2009.5411165
关键词:
摘要: In this paper the potential of amorphous silicon carbide used as an emitter for heterojunction solar cells is presented. Especially annealing behaviour open-circuit voltage V oc n-doped investigated in detail. We present our results a significant improvement more than 100 mV on both flat and textured front surface triggered by thermal hot plate. The observed can be described best stretched exponential function, which general describes relaxation rates complex systems. Further we optimum conditions post deposition step order to reach highest efficiency. During analysis also deterioration cell performance when structure annealed very long time. conclusion, suppose that diffusion weakly bonded or free hydrogen, activated saturates dangling bonds layer itself most likely important at interface, responsible strong
sci-hub.se 参考文章(13)
F. Kohlrausch, Ueber die elastische Nachwirkung bei der Torsion Annalen der Physik und Chemie. ,vol. 195, pp. 337- 368 ,(1863) , 10.1002/ANDP.18631950702
Chris G. Van de Walle, STRETCHED-EXPONENTIAL RELAXATION MODELED WITHOUT INVOKING STATISTICAL DISTRIBUTIONS Physical Review B. ,vol. 53, pp. 11292- 11295 ,(1996) , 10.1103/PHYSREVB.53.11292
R. Street, J. Kakalios, C. Tsai, T. Hayes, Thermal-equilibrium processes in amorphous silicon Physical Review B. ,vol. 35, pp. 1316- 1333 ,(1987) , 10.1103/PHYSREVB.35.1316
Chris G. Van de Walle, Energies of various configurations of hydrogen in silicon. Physical Review B. ,vol. 49, pp. 4579- 4585 ,(1994) , 10.1103/PHYSREVB.49.4579
Chris G Van de Walle, LH Yang, Band discontinuities at heterojunctions between crystalline and amorphous silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 13, pp. 1635- 1638 ,(1995) , 10.1116/1.587870
M. Schmidt, L. Korte, A. Laades, R. Stangl, Ch. Schubert, H. Angermann, E. Conrad, K.v. Maydell, Physical aspects of a-Si:H/c-Si hetero-junction solar cells Thin Solid Films. ,vol. 515, pp. 7475- 7480 ,(2007) , 10.1016/J.TSF.2006.11.087
S. Janz, S. Riepe, M. Hofmann, S. Reber, S. Glunz, Phosphorus-doped SiC as an excellent p-type Si surface passivation layer Applied Physics Letters. ,vol. 88, pp. 133516- ,(2006) , 10.1063/1.2191954
K. v. Maydell, E. Conrad, M. Schmidt, Efficient silicon heterojunction solar cells based on p- and n-type substrates processed at temperatures < 220°C Progress in Photovoltaics. ,vol. 14, pp. 289- 295 ,(2006) , 10.1002/PIP.668
Stefaan De Wolf, Hiroyuki Fujiwara, Michio Kondo, Impact of annealing on passivation of a-Si:H / c-Si heterostructures photovoltaic specialists conference. pp. 1- 4 ,(2008) , 10.1109/PVSC.2008.4922851
Stefaan De Wolf, Sara Olibet, Christophe Ballif, Stretched-exponential a-Si:H∕c-Si interface recombination decay Applied Physics Letters. ,vol. 93, pp. 032101- ,(2008) , 10.1063/1.2956668