White light from annealed porous silicon: Broadband emission from violet to the near infrared
作者： Oscar Marin , Ana María Gennaro , Mónica Tirado , Roberto R. Koropecki , David Comedi
DOI: 10.1016/J.MATLET.2015.03.003
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摘要: Abstract We report white light emission under UV excitation from porous silicon (PS) samples annealed at different temperatures and surrounding atmospheres. The photoluminescence (PL) spectra show a broad ultraviolet to near infrared. Annealed PS were studied by photoluminescence, FTIR EPR spectroscopies. PL found include three main components centered the violet, green experiments suggest formation of system composed nanocrystals embedded in nonstoichiometric oxide matrix (nc-Si/SiO x ). measurements reveal existence well-know P b 0 ( g ~2.007) 1 ~2.004) centres, signal ~1.9997. combined PL, results that violet emissions come oxygen-excess defects SiO while infrared is related located Si/SiO interfaces.
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