Worst-Case Simulation Using Principal Component Analysis Techniques: An Investigation

摘要: Unavoidable statistical perturbations inherent in any IC manufacturing process lead to variations MOSFET device parameters. Circuit performances, being sensitive these model parameters, also exhibit spreads. A new methodology by which circuit designers can accurately predict worst-case performance limits prior fabrication is presented. Measured parameter spreads, correlations, principal component analysis techniques, and gradient information have been utilised.