作者: S. Vicknesh , S. Tripathy , Vivian K. X. Lin , L. S. Wang , S. J. Chua
DOI: 10.1063/1.2472558
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摘要: The authors demonstrate the use of a dry releasing technique to achieve deeply undercut GaN-based microdisk structures supported by silicon platforms. Varying dimensions on posts with large air gaps are fabricated XeF2-based etching underlying material. residual stress variation in these microdisks is studied high spectral resolution micro-Raman mapping. Such fabrication may effectively improve light extraction efficiency from emitting diodes substrates.