Top-down fabrication of large-area GaN micro- and nanopillars
作者： Ratan Debnath , Jong-Yoon Ha , Baomei Wen , Dipak Paramanik , Abhishek Motayed
DOI: 10.1116/1.4865908
关键词: Wide-bandgap semiconductor 、 Materials science 、 Etching (microfabrication) 、 Inductively coupled plasma 、 Nanopillar 、 Analytical chemistry 、 Reactive-ion etching 、 Plasma etching 、 Gallium nitride 、 Optoelectronics 、 Nitride
摘要: Large-area gallium nitride (GaN) micro- and nanopillar (NP) arrays were fabricated by plasma etching of lithographically patterned GaN thin-film grown on Si substrate. Deep-ultraviolet lithography, inductively coupled (ICP) etching, subsequent chemical treatments effectively utilized to fabricate pillars with diameters ranging from 250 nm 10 μm. The impact various process parameters etchants the morphology, strain, surface defects these NPs studied using scanning-electron microscopy, photoluminescence (PL), Raman spectroscopy. It was found that shape can be controlled substrate temperature during etch different gas chemistries. Room-temperature PL spectroscopy measurements revealed significant strain relaxation in diameter as compared 10 μm pillars. measurement also indicated damage removed KOH-ethylene glycol solution. Post-ICP selective wet enabled us functional structures such nanodisks GaN, which potentially could nitride-based resonators lasers.
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sci-hub.se 参考文章(23)
S. Vicknesh, S. Tripathy, Vivian K. X. Lin, L. S. Wang, S. J. Chua, Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms Applied Physics Letters. ,vol. 90, pp. 071906- ,(2007) , 10.1063/1.2472558
D. Zhuang, J.H. Edgar, Wet etching of GaN, AlN, and SiC : a review Materials Science & Engineering R-reports. ,vol. 48, pp. 1- 46 ,(2005) , 10.1016/J.MSER.2004.11.002
H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, S. J. Chua, Lasing in GaN microdisks pivoted on Si Applied Physics Letters. ,vol. 89, pp. 211101- ,(2006) , 10.1063/1.2392673
H. Morkoc, S. N. Mohammad, High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes Science. ,vol. 267, pp. 51- 55 ,(1995) , 10.1126/SCIENCE.267.5194.51
Sergiy Krylyuk, Dipak Paramanik, Matt King, Abhishek Motayed, Jong-Yoon Ha, John E Bonevich, Alec Talin, Albert V Davydov, None, Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth Applied Physics Letters. ,vol. 101, pp. 241119- ,(2012) , 10.1063/1.4769376
Reza Sanatinia, Marcin Swillo, Srinivasan Anand, Surface second-harmonic generation from vertical GaP nanopillars. Nano Letters. ,vol. 12, pp. 820- 826 ,(2012) , 10.1021/NL203866Y
F. Demangeot, J. Gleize, J. Frandon, M. A. Renucci, M. Kuball, D. Peyrade, L. Manin-Ferlazzo, Y. Chen, N. Grandjean, Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching Journal of Applied Physics. ,vol. 91, pp. 6520- 6523 ,(2002) , 10.1063/1.1468908
Kunook Chung, Chul-Ho Lee, Gyu-Chul Yi, Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices Science. ,vol. 330, pp. 655- 657 ,(2010) , 10.1126/SCIENCE.1195403
Dipak Paramanik, Abhishek Motayed, Geetha S. Aluri, Jong-Yoon Ha, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Sean McLaughlin, Shalini Gupta, Harlan Cramer, Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. ,vol. 30, pp. 052202- ,(2012) , 10.1116/1.4739424
R. Sanatinia, K. M. Awan, S. Naureen, N. Anttu, E. Ebraert, S. Anand, GaAs nanopillar arrays with suppressed broadband reflectance and high optical quality for photovoltaic applications Optical Materials Express. ,vol. 2, pp. 1671- 1679 ,(2012) , 10.1364/OME.2.001671