The role of oxygen vacancy in fluorine-doped SnO2 films
作者： B. Zhang , Y. Tian , J.X. Zhang , W. Cai
DOI: 10.1016/J.PHYSB.2011.02.037
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摘要: Abstract The fluorine-doped tin oxide films (FTO) were prepared with SnCl2 and SnCl4 precursors using the spray pyrolysis method. vibrational feature of oxygen vacancy in FTIR has been identified. plays a role donor FTO films, although it becomes inconspicuous an increase fluorine concentration solution. substitution for also confirmed by spectrum, further indicates production doping is α-SnF2. reflectivity shows close relation carrier concentration, suggested Drude theory. discussion scattering mechanism suggests that impurity ions are main centers free carriers.
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