作者: Areum Kim , Hyunjin Park , Eunmi Choi , Yinhua Cui , Seon Jea Lee
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摘要: In this paper, we describe selective deposition of a major electrode and protection in heterojunction with intrinsic thin-layer (HIT) type solar cell. Sn Ni were used for the to prevent oxidation Cu, which was main electrode. SEM TEM analyze microstructural evolution changes interface as result each electroless deposition. Finally, performance our cell created via evaluated. We determined photovoltaic conversion efficiency (PCE) be 16.4 %, fill factor (FF) 72.2 %, open circuit voltage (Voc) 681 mV, short current (Jsc) 33.0 mA/cm2. These output values match an Ag screen-printed demonstrate possibility commercializing inexpensive HIT high efficiency.