High-pressure sensor comprising silicon membrane and solder layer
作者： Berthold Rogge , Ralf Kaiser , Martin Mast , Masoud Habibi
DOI:
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摘要: The invention relates to a pressure sensor (10) for use in device measuring (high) pressure. Said is configured as semiconductor and soldered directly onto support element (5) provided with first channel section by means of solder layer. an FeNi or FeNiCo alloy. layer AuSn20, which adapted small thermal coefficients expansion. may consist two silicon structures that are linked AuSi eutectic bond. A peripheral collar (42) ensures reliable weld seam, cover (61) allows module formation.
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