Seventy-fold enhancement of light extraction from a defectless photonic crystal made on silicon-on-insulator
作者： M. Zelsmann , E. Picard , T. Charvolin , E. Hadji , M. Heitzmann
DOI: 10.1063/1.1614832
关键词:
摘要: Very high photoluminescence extraction is observed from defectless two-dimensional photonic crystals etched in the upper 200-nm-thick silicon layer of a silicon-on-insulator (SOI) substrate. Predicted very low group velocity modes near Γ point band structure lying above light line are used to extract crystal slab into free space. It found that extracted on 80-nm-wide along directions perpendicular slab, with an enhancement up 70 compared unpatterned SOI.
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