Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter‐deposited aluminum alloy thin films
作者： Takashi Onishi , Eiji Iwamura , Katsutoshi Takagi , Kazuo Yoshikawa
DOI: 10.1116/1.580194
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摘要: … leased by annealing at 200–300 C, whereas the lattice distortion of Al–Ta alloy films is gradually released by annealing at 300–500 C. The stress release in Al–Fe alloy films …
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