Method for preparing ITO (indium tin oxide) patterns by stripping

摘要: The invention relates to a method for preparing ITO (indium tin oxide) patterns by stripping. includes steps of evaporating SiO2 layer higher than an layer, taking photoresist as mask etch form required patterns; the on after removing photoresist, and according large difference etching rate corrosive liquid SiO2, side wall wafer be adhesive slightly so weakening adhesion then forming means film stripping layer. has advantages that edge burrs generated in wet-process earth leakage chip is reduced; peak N area due residual avoided since no left area, ESD (electronic static discharge) yield improved while edges prepared are neat, appearance quantity greatly.