Improved contact properties of Metal/Graphene interface by inserting MoOx dielectric layer
作者： Wei He , Xin-Ping Qu
DOI: 10.1109/ICSICT.2016.7999054
关键词:
摘要: In graphene FETs, the work function (WF) of electrode materials has remarkable influence on contact properties Metal/Graphene(M/G). MoOx is a material with extremely high WF, when inserting nanoscale MoOx(x<3) thin layer between interface source/drain and in acting as an efficient hole injection layer, can induce p-doping to therefore reduce resistances M/G, hence improve electrical FETs.
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