Fabrication of Transferable Al2O3 Nanosheet by Atomic Layer Deposition for Graphene FET

摘要: Without introducing defects in the monolayer of carbon lattice, deposition high-κ dielectric material is a significant challenge because difficulty high-quality oxide nucleation on graphene. Previous investigations dielectrics graphene have often reported degradation electrical properties In this study, we report new way to integrate with by transferring nanosheet onto Al2O3 film was deposited sacrificial layer using an atomic process and fabricated removing layer. Top-gated field-effect transistors were characterized as gate dielectric. The top-gated demonstrated mobility up 2200 cm2/(V s). This method provides for high-performance devices broad potential impacts reaching from high-frequ...