Advantages of a buried-gate structure for graphene field-effect transistor
作者： Sang Kyung Lee , Yun Ji Kim , Sunwoo Heo , Woojin Park , Tae Jin Yoo
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摘要: … the graphene-silicon barristor is that the SBH is very sensitive to the quality of the interface … characteristics of GFET due to poor dielectric quality and high interface scattering [33–38]. …
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