Observation of point defects in ZnSe using the positron annihilation method
作者： T. Miyajima , H. Okuyama , K. Akimoto , Y. Mori , L. Wei
DOI: 10.1016/0022-0248(92)90838-A
关键词:
摘要: Abstract We studied point defects in ZnSe films grown by molecular beam epitaxy using the positron annijilation method. found that doping with Ga atoms induces vacancy type such as Zn-vacancies, and a heavy oxygen interstitial films. think these are one of causes active carrier saturation doped
harvard.edu
elsevier.com
sci-hub.se 参考文章(9)
G. D. Watkins, EPR observation of close Frenkel pairs in irradiated ZnSe Physical Review Letters. ,vol. 33, pp. 223- 225 ,(1974) , 10.1103/PHYSREVLETT.33.223
Peter J. Schultz, K. G. Lynn, Interaction of positron beams with surfaces, thin films, and interfaces Reviews of Modern Physics. ,vol. 60, pp. 701- 779 ,(1988) , 10.1103/REVMODPHYS.60.701
J Van der Rest, P Pecheurs, Electronic structure of the ideal vacancies in Ge, GaAs and ZnSe crystals Journal of Physics C: Solid State Physics. ,vol. 17, pp. 85- 95 ,(1984) , 10.1088/0022-3719/17/1/015
Jong‐Lam Lee, Long Wei, Shoichiro Tanigawa, Mitsuo Kawabe, Impurity effect on the creation of Ga vacancies in a Si-doped layer grown on Be-doped GaAs by molecular-beam epitaxy Journal of Applied Physics. ,vol. 68, pp. 5571- 5575 ,(1990) , 10.1063/1.346992
Akira Uedono, Shoichiro Tanigawa, Jun Sugiura, Makoto Ogasawara, A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam Japanese Journal of Applied Physics. ,vol. 28, pp. 1293- 1297 ,(1989) , 10.1143/JJAP.28.1293
S. Tanigawa, Y. Iwase, A. Uedono, H. Sakairi, A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beam Journal of Nuclear Materials. ,vol. 133-134, pp. 463- 467 ,(1985) , 10.1016/0022-3115(85)90190-4
Katsuhiro Akimoto, Takao Miyajima, Yoshifumi Mori, Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy Japanese Journal of Applied Physics. ,vol. 28, ,(1989) , 10.1143/JJAP.28.L531
R. M. Park, M. B. Troffer, C. M. Rouleau, J. M. DePuydt, M. A. Haase, p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth Applied Physics Letters. ,vol. 57, pp. 2127- 2129 ,(1990) , 10.1063/1.103919
D. L. Mills, M. Weber, Enhanced electric fields near gratings: Comments on enhanced Raman scattering from surfaces Physical Review B. ,vol. 26, pp. 1075- 1078 ,(1982) , 10.1103/PHYSREVB.26.1075