MOCVD Regrowth over GaAs/AIGaAs Gratings for High Power Long-Lived lnGaAs/AIGaAs Lasers
作者： P.K. York , J.C. Connolly , N.A. Hughes , T.J. Zamerowski , J.H. Abeles
DOI: 10.1016/0022-0248(92)90540-Y
关键词:
摘要: … in GaAs was observed during MOCVD regrowth been exposed … the MOCVD reactor for regrowth. doped 1 x 1018 cm3, two … MOCVD regrowth was performed in an atmoquantum wells (…
harvard.edu
elsevier.com
sci-hub.se 参考文章(19)
N.W. Carlson, D.P. Bour, G.A. Evans, S.K. Liew, Operation of a strained-layer distributed-feedback surface-emitting laser ieee international conference on semiconductor laser. pp. 20- 21 ,(1990) , 10.1109/ISLC.1990.764410
M. Kawabe, N. Kanzaki, K. Masuda, S. Namba, Effects of ion etching on the properties of GaAs. Applied Optics. ,vol. 17, pp. 2556- 2561 ,(1978) , 10.1364/AO.17.002556
Y. Mihashi, Y. Nagai, Y. Ohta, T. Tanaka, K. Ikeda, W. Susaki, Long-lived MOCVD-grown 780 nm SBA laser with reduced influence of regrowth interface Journal of Crystal Growth. ,vol. 93, pp. 814- 819 ,(1988) , 10.1016/0022-0248(88)90624-0
J. Z. Wilcox, G. L. Peterson, S. Ou, J. J. Yang, M. Jansen, D. Schechter, Gain‐ and threshold‐current dependence for multiple‐quantum‐well lasers Journal of Applied Physics. ,vol. 64, pp. 6564- 6567 ,(1988) , 10.1063/1.342028
D. R. Scifres, R. D. Burnham, W. Streifer, Distributed‐feedback single heterojunction GaAs diode laser Applied Physics Letters. ,vol. 25, pp. 203- 206 ,(1974) , 10.1063/1.1655440
R. G. Waters, P. K. York, K. J. Beernink, J. J. Coleman, Viable strained-layer laser at λ=1100 nm Journal of Applied Physics. ,vol. 67, pp. 1132- 1134 ,(1990) , 10.1063/1.345758
K. J. Beernink, P. K. York, J. J. Coleman, R. G. Waters, J. Kim, C. M. Wayman, Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness Applied Physics Letters. ,vol. 55, pp. 2167- 2169 ,(1989) , 10.1063/1.102089
F. Iikawa, P. Motisuke, J.A. Brum, M.A. Sacilotti, A.P. Roth, R.A. Masut, Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPE Journal of Crystal Growth. ,vol. 93, pp. 336- 341 ,(1988) , 10.1016/0022-0248(88)90549-0
U. Das, J. E. Oh, P. K. Bhattacharya, D. Biswas, P. R. Berger, Investigation of the interface region produced by molecular beam epitaxial regrowth Journal of Electronic Materials. ,vol. 18, pp. 137- 142 ,(1989) , 10.1007/BF02657399
A. C. Papadopoulo, Etching procedures of GaAs: Cathodoluminescence study of the induced damages and of the recovering techniques Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 8, pp. 407- 412 ,(1990) , 10.1116/1.585035