Optical semiconductor device with diffraction grating structure

摘要: Optical semiconductor devices with integrated diffraction gratings higher quality are realized through the use of Al-free grating layers. AlGaAs/GaAs regime optical devices, such as laser diodes or filters, conventionally utilize an AlGaAs layer that has a strong affinity for oxidation. Instead Al-containing layer, quantenary, InGaAsP is utilized, lattice matched to underlying structure, substantially eliminating any problem oxide contamination. Also, Al-free, ternary InGaP utilized in InGaP/InGaAsP/GaAs material regime. The quantum well active region these may also be modified extend gain bandwidth operation insure continued over wider temperature range wavelength peak more assuredly remains within operating device.