Microstructure and dielectric properties of pyrochlore Bi2Ti2O7 thin films
作者： Joël Cagnon , Damien S. Boesch , Nicholas H. Finstrom , Saide Z. Nergiz , Sean P. Keane
DOI: 10.1063/1.2769777
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摘要: Bi2Ti2O7 thin films were grown by radio-frequency magnetron sputtering on bare and Pt-coated sapphire substrates at low substrate temperatures (∼200 °C). Postdeposition anneals carried out different to crystallize the films. Nearly phase-pure with cubic pyrochlore structure obtained annealing up 800 °C. Impurity phases, in particular Bi4Ti3O12, formed higher temperatures. At 1 MHz, dielectric constants about 140–150 a very small tunability loss was 4×10−3. The increased frequency. properties of are compared those bismuth zinc niobate
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