Negative differential resistance and hysteresis in Au/MoO3−δ/Au devices

摘要: Metal/oxide/metal thin devices may exhibit hysteresis and negative differential resistance (NDR) under time-varying voltage at low temperatures that strongly depend on the frequency of applied voltage. Herein, we demonstrated analyzed this in Au/MoO3−δ/Au devices, tested 55–80 °C. Reduced MoO3−δ is a mixed ionic–electronic conductor (MIEC) conducts electrons oxygen vacancies. Hysteresis NDR disappear high scan rates when ion motion practically frozen response to cycles quasi-static. Contrary cyclic voltammetry electrochemistry, peaks appear end with are not because redox reaction but result dynamics ionic motion. A rate exchange ambient detected during prolonged measurements. The anodic found be faster than cathodic reaction, oxide reduced (anti) symmetric cycles. Upon fitting theory previously reported by our group, electron mobility activation energy, vacancy as well current density electrodes, device were obtained relatively temperatures.