Study of scattering of charge carriers in thin films of (Bi0.25Sb0.75)2Te3 alloy with 2% excess Te
作者： V.Damodara Das , Ramesh Chandra Mallik
DOI: 10.1016/S0025-5408(02)00810-3
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摘要: Abstract Thin films of (Bi0.25Sb0.75)2Te3 with 2% excess Te different thicknesses were prepared by the flash evaporation technique. Electrical resistivity and thermoelectric power measured for thickness at temperatures. Applying Jain–Verma theory carrier energy dependent relaxation time, data thin analysed to understand nature scattering mechanisms in this material. The parameter b was calculated from data. This gives us an indication about processes before mentioned composition films. It is found such analysis alloy that index varies material −0.2 −0.1 positive values higher
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