Scaling of emission currents and of current fluctuations of gated silicon emitter ensembles

作者: H. H. Busta

DOI: 10.1116/1.587371

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摘要: The scaling of emission currents and their corresponding current fluctuations ensembles gated, monocrystalline silicon emitters ranging from n=1 to n=20 800 have been investigated. For randomly selected ensembles, the scales approximately with n fluctuation n−0.16. identical behavior, n−0.5 as is expected theory. discrepancy in exponent for caused by poor participation within an ensemble. Only a few per ensemble contribute total current. behavior can thus be used diagnostic tool evaluate given process. measurements were performed at room temperature pressures 1×10−8 Torr.

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