Low-voltage electron emission from “tipless” field emitter arrays
作者： H. Busta , D. Furst , A. T. Rakhimov , V. A. Samorodov , B. V. Seleznev
DOI: 10.1063/1.1376153
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摘要: Electron emission is obtained from “tipless” gated n-silicon arrays (6460 gate holes) by depositing about 10 nm of nanocrystalline graphite (NCG) on top the gates and into holes a glow-discharge technique at 900 °C. The polycrystalline silicon diameter 1.8 μm gate-to-substrate distance 0.85 μm. interdielectric layer SiO2. Turn-on voltages are 40–60 V. currents 50% total currents. From site density NCG films current fluctuation measurements, it concluded that several sites generated inside NCG–Si interface exhibit voltage (Vg) -induced field enhancement. these expressed E=βVg.
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