Incorporation of Erbium in Porous Silicon

摘要: Photoluminescence at 1.54 μm from Er in Si has received much attention because of the possible uses optoelectronics. Incorporating porous silicon (PSi) might lead to efficient luminescence this wavelength. We have prepared layers by anodic etching p-type single crystal wafers an electrolyte consisting hydrofluoric acid and ethanol. Thereafter been incorporated into PSi immersing a solution ErCl3 ethanol electrochemical cell with positive Pt electrodes wafer as negative electrode. The distribution Cl layer examined using scanning electron microscope energy dispersive X-ray spectroscopy system. After it is observed that both are present layer. These elements also for samples no bias or current flowing seems significant effect on amount elements. annealing 800°C 60 min 20% O2/80% N2 atmosphere practically all escaped while remains.