Optimization of Si/sub 1-x/Ge/sub x//Si waveguide photodetectors operating at /spl lambda/=1.3 /spl mu/m

作者: L. Naval , B. Jalali , L. Gomelsky , J.M. Liu

DOI: 10.1109/50.495159

关键词:

摘要: This paper analyzes the influence of various design parameters in external quantum efficiency (QE) waveguide detectors based on Si/Si/sub 1-x/Ge/sub x/ strained-layer superlattices (SLSs), for use optical communications at /spl lambda/=1.3 mu/m. The study presents an algorithm that automatically generates structurally stable SLSs. generation is completed by intensive simulation generated SLSs to calculate QE. embraces waveguiding, absorption, size effect, as well thermodynamics strained layers. Two sets data were created using two different models SiGe layer critical thickness, h/sub c/(x). A conservative model c/, corresponding equilibrium regime, yielded discrete maximum values QE (around 12%) mainly dependent alloy absorption. second metastable produced considerably higher QEs 60%), and shows great importance fiber-to-waveguide coupling efficiency. passive-waveguide coupler geometry investigated beam propagation method.

参考文章(20)
H. Rücker, R. Enderlein, F. Bechstedt, Strain Effects on the Band Structure of Si/Si1–xGex (001) Superlattices physica status solidi (b). ,vol. 153, pp. 595- 609 ,(1989) , 10.1002/PSSB.2221530218
Calvin Yi-Ping Chao, Shun Lien Chuang, Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells. Physical Review B. ,vol. 46, pp. 4110- 4122 ,(1992) , 10.1103/PHYSREVB.46.4110
R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Störmer, K. W. Wecht, R. T. Lynch, K. Baldwin, Modulation doping in GexSi1−x/Si strained layer heterostructures Applied Physics Letters. ,vol. 45, pp. 1231- 1233 ,(1984) , 10.1063/1.95074
S C Jain, W Hayes, Structure, properties and applications of GexSi1-x strained layers and superlattices Semiconductor Science and Technology. ,vol. 6, pp. 547- 576 ,(1991) , 10.1088/0268-1242/6/7/001
S. Luryi, T.P. Pearsall, H. Temkin, J.C. Bean, Waveguide infrared photodetectors on a silicon chip IEEE Electron Device Letters. ,vol. 7, pp. 104- 107 ,(1986) , 10.1109/EDL.1986.26309
H. H. Li, Refractive index of silicon and germanium and its wavelength and temperature derivatives Journal of Physical and Chemical Reference Data. ,vol. 9, pp. 561- 658 ,(1980) , 10.1063/1.555624
Rubin Braunstein, Arnold R. Moore, Frank Herman, Intrinsic Optical Absorption in Germanium-Silicon Alloys Physical Review. ,vol. 109, pp. 695- 710 ,(1958) , 10.1103/PHYSREV.109.695
H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, S. Luryi, GexSi1−xstrained‐layer superlattice waveguide photodetectors operating near 1.3 μm Applied Physics Letters. ,vol. 48, pp. 963- 965 ,(1986) , 10.1063/1.96624