作者: Yuan Tian , Xueming Chen , Chii Shang , Guohua Chen
DOI: 10.1149/1.2202148
关键词:
摘要: Boron-doped diamond film grown on a titanium substrate (Ti/BDD) has shown certain stability with superior activity. The causes of its eventual failure may be the large thermal residual stress in film, which leads to delamination film. A dissociation TiC layer would collapse also. Ti/BDD is expected improved by coating thin silicon before growing at relatively low temperature. Hot filament chemical vapor deposition was used grow Ti/Si/BDD electrode an accelerated lifetime 320 h, over 20% longer than that Ti/BDD. Raman spectroscopy, X-ray diffraction, and scanning electron microscopy examinations demonstrated films had well-defined features. anodes also showed excellent activity anodic oxidation typical pollutants like phenol, acetic acid, maleic acid. pollutant removal efficiency as high 90% can obtained effect pH being insignificant. current slightly 50% observed when phenol degraded terms oxygen demand density 200 A/m 2 .