作者: P Samarasekara , MAK Mallika Arachchi , AS Abeydeera , CAN Fernando , AS Disanayake
DOI: 10.1007/BF02711241
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摘要: Copper oxide (CuO) thin films with photocurrent as high 25 μA/cm2 were deposited on conductive glass substrates using d.c. reactive sputtering. This was the highest reported for sputteredp- type copper measured in electrolyte KI. The drastically increased up to (μA/cm2 sputtering pressure and substrate temperature 8.5 mbar 192°C, respectively. All synthesized contained single phase of CuO this range temperature. Variation photocurrent, photovoltage, structure absorbance deposition conditions studied detail.