High-quality active inductors
作者： G. D'Angelo , L. Fanucci , A. Monorchio , A. Monterastelli , B. Neri
DOI: 10.1049/EL:19991199
关键词:
摘要: A high-quality active integrated inductor is presented. The circuit has an inductance of 20 nH and a quality factor 47 at 1.8 GHz. It designed to be realised using standard silicon bipolar technology consumes 2.6 mW supply voltage 3 V.
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iee.org.uk参考文章(4)
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