Phase evolution in aluminum nitride thin films on Si(100) prepared by radio frequency magnetron sputtering

摘要: Abstract Aluminum nitride (AlN) thin films were deposited on Si(100) substrate using radio frequency (r.f.) magnetron sputtering. AlN/Si interfaces analyzed by selected-area electron diffraction, cross-sectional high-resolution transmission microscopy and Auger spectroscopy. The effects of increasing deposition times the resultant AlN phase composition, especially in interface regions, discussed. film, at r.f. power 200 W temperature 250°C for 1 min, consists two distinct layers different phases. At film/substrate area a 3.3-nm thick amorphous with small amount oxygen was formed. A polycrystalline oriented preferentially to c-axis observed rest film. As time increased 2 thickness layer decreased 1.5 nm, indicating that crystallized during time. Lower 150°C also certified trend decrease heating effect bombardment energetic neutralized ions ambient diffusion growing film would promote surface activation crystallization.