Determination of damage profiles in semiconductors using differential reflectance
作者： M. Gal
关键词:
摘要: We review differential reflectance (DR) spectroscopy, an optical technique that can be used to detect damage in semiconductors a broad range of defect densities. In this study, we focus on the determination depth distribution ion-implanted using DR. give details about method and discuss experimental results involving GaAs Si under various conditions. compare experimentally determined profiles with calculations show there is very good agreement between experiments theory.
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