Optical investigations of ion implant damage in silicon
作者： R. E. Hummel , Wei Xi , P. H. Holloway , K. A. Jones
DOI: 10.1063/1.340996
关键词:
摘要: Ion implantation damage in silicon has been studied utilizing a new optical technique (differential reflectometry). It demonstrated that differential reflectometry can be used to identify whether an implanted layer is crystalline, damaged or amorphous. The intensity of interband transitions determine the thickness crystalline over submerged amorphous layer. Interference effects were utilized Thus, reflectance far‐reaching potential for characterizing substrates.
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