Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3

摘要: Abstract Low-temperature sequential exposures of N2H4 and BCl3 have been performed on Si0.3Ge0.7(001), Cu, HOPG surfaces at 350 °C. A novel BN ALD process has achieved Si0.3Ge0.7(001) with 60 cycles producing a uniform, pinhole-free thin film low contamination, as characterized XPS AFM. On Cu spectra indicated near stoichiometric film. While AFM imaging the deposition yielded nanometer-scale etching, conformal was observed Si0.3Ge0.7(001). The also nucleated inert via step edges. In situ STM showed that cyclic 350 °C were able to decorate edges features ∼2 nm tall ∼200 nm wide, indicating propensity for grow in planar direction. allows oxygen, carbon films, but avoid growth should be by N2H4, since exposure can result formation volatile Cl-containing surface species many substrates. Therefore, stable nitride prior is necessary prevent desorption from substrate.