Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
作者： Shih-Chun Ling , Te-Chung Wang , Jun-Rong Chen , Po-Chun Liu , Tsung-Shine Ko
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摘要: In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of LEDs. The apparent emission polarization anisotropy was observed degree as high 67.4%. addition, electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed band-filling effect, then EL peak become constant. current-voltage curve showed forward voltage LED substrate 3.43 V differential series resistance measured about 24 Omega 20-mA injected current. Furthermore, output power 240 muW at 100-mA
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