The Atomic Force Microscopy for Nanoelectronics

摘要: The invention of scanning tunneling microscopy (STM), rapidly followed by atomic force (AFM), occurred at the time when extensive research on sub-µm metal oxide field-effect transistors (MOSFET) was beginning. Apparently uncorrelated, these events have positively influenced one another. In fact, ultra-scaled semiconductor devices required nanometer control surface quality, and newborn techniques provided unprecedented sensing capability scale. This alliance opened new horizons for materials characterization continues to this day, with AFM representing most popular analysis in nanoelectronics. book discusses how introduction benefited from AFM, while driving capabilities novel directions. Here, goal is introduce major electrical methods, going through journey that has seen our life changed advent ubiquitous nanoelectronics devices, extended sense matter a scale previously inaccessible.